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Synchrotron radiation studies of the orientation of thin silicon phthalocyanine dichloride film on HOPG substrate
Thin silicon Phthalocyanine dichloride films on HOPG were prepared and the sample was heated in the vacuum with laser.The thickness of the thin sample on HOPG was checked by X-ray photoemission spectroscopy.The orientation of the molecules in respect to the substrate plane Was investigated by measuring the silicon K-edge near edge X-ray absorption fine structure(NEXAFS).In the NEXAFS spectra of the thin sample,two clear peaks which were assigned to 1s→σ*Si-N and 1s→σ*Si-C1 appeared around 1847.2 eV and 1843.1 eV respectively.The intensities of the resonance peaks showed strong polarization dependence.A quantitative analysis of the polarization dependence revealed that the Si-N bond tended to lie down while the Si-C1 bond was out of the molecular plane.
作 者: DENG Ju-Zhi CHEN Rong SEKIGUCHI Tetsuhiro BABA Yuji HIRAO Norie HONDA Mitsunori 作者單位: DENG Ju-Zhi(Key Laboratory of Nuclear Resources and Environment(East China Institute of Technology),Ministry of Education,Nanchang 330013,China;School of Geophysics and Information Technology,China University of Geosciences(Beijing),Beijing 100083,China)CHEN Rong(Key Laboratory of Nuclear Resources and Environment(East China Institute of Technology),Ministry of Education,Nanchang 330013,China)
SEKIGUCHI Tetsuhiro,BABA Yuji,HIRAO Norie,HONDA Mitsunori(Synchrotron Radiation Research Center,Japan Atomic Energy Agency,Ibaraki-ken 319-1195,Japan)
刊 名: 中國物理C(英文版) ISTIC 英文刊名: CHINESE PHYSICS C 年,卷(期): 2008 32(9) 分類號: O4 關(guān)鍵詞: near edge X-ray absorption fine structure(NEXAFS) orientation silicon phthalocyanine dichloride polarization dependence【Synchrotron radiation studies of the】相關(guān)文章:
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